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2SB1386 - PNP Silicon Epitaxial Planar Transistor

Key Features

  • z Low VCE(sat)=-0.35V(Typ. ) (IC/IB=-4A/-0.1A). Pb Lead-free z Excellent DC current gain characteristics. z Complementary: 2SD2098. 2SB1386.

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Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). Pb Lead-free z Excellent DC current gain characteristics. z Complementary: 2SD2098. 2SB1386 APPLICATIONS z Low frequency transistor. ORDERING INFORMATION Type No. Marking 2SB1386 BHP/BHQ/BHR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage -30 -20 VEBO IC PC RθJA Emitter-Base Voltage Collector Current Collector Dissipation -6 DC -5 Pulse -10 500 Thermal Resistance,,Junction-to- Ambient 300 RθJC Thermal Resistance,Junction -to-Case 80 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A mW ℃/W ℃/W ℃ E024 Rev.A www.