FEATURES
Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -30 -20 -6 -5 -10 0.5 150 -55 to +150 ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol Testconditons BVCBO IC=-50ìA BVCEO IC=-1mA BVEBO IE=-50ìA ICBO VCB=-20V IEBO VEB=-5V VCE(sat) IC=-4A,IB=-0.1A hFE VCE=-2V, IC=-0.5A Cob VCE=-6V, IE=50mA, f=30MHz fT VCB=-20V, IE=0A, f=1MHz Unit V V V A A W Min Typ Max Un...