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2SB1386 - SOT-89 Plastic-Encapsulate Transistors

Key Features

  • TRANSI.
  • SBbTeaOtttceRhr pr(erPovcNeerPsses) design, excellent power dissipation offer leakage current and thermal resistance. s FEATUR.
  • LEoopSwtimpirzoefibleosaurdrfaspcea moun ce. ted ap plicati on in order to z Low.
  • Lcoowllepocwtoerr sloastsu, rhaigtihoenffvicoieltnacgy. e z Exe.
  • cHHlliieggnhh tscuucrrugrerernectancpat-aptboaib-ligitlyiat. yi,nlocwhfaorrawcatredrvisotltiacgse drop. z Pb-.
  • FGreuearpdraincgkfaogr oeviesrvaovltaagileapbrlo.

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Datasheet Details

Part number 2SB1386
Manufacturer WILLAS
File Size 564.29 KB
Description SOT-89 Plastic-Encapsulate Transistors
Datasheet download datasheet 2SB1386 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WILLAS S1O.0ATS-8UR9FAPClEaMsOtUicNT-ESCnHcOaTTpKsYuBAlaRtReIERTRraECnTsIFiIEsRtSo-r2s0V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1386 THRU FM1200-M+ Pb Free Product Features TRANSI•SBbTeaOtttceRhr pr(erPovcNeerPsses) design, excellent power dissipation offer leakage current and thermal resistance. s FEATUR• LEoopSwtimpirzoefibleosaurdrfaspcea moun ce. ted ap plicati on in order to z Low• Lcoowllepocwtoerr sloastsu, rhaigtihoenffvicoieltnacgy.e z Exe••cHHlliieggnhh tscuucrrugrerernectancpat-aptboaib-ligitlyiat.yi,nlocwhfaorrawcatredrvisotltiacgse drop. z Pb-•FGreuearpdraincgkfaogr oeviesrvaovltaagileapbrloetection. RoH• SUltprarohdiguhc-tspfoeredpaswckiticnhgincgo. de suffix ”G” • Silicon epitaxial planar chip, metal silicon junction.