WILLAS 2SB1386
SOT-89 Plastic-Encapsulate Transistors
FEATURES
TRANSI●SBbTeaOtttceRhr pr(erPovcNeerPsses) design, excellent power dissipation offer leakage current and thermal resistance. s FEATUR● LEoopSwtimpirzoefibleosaurdrfaspcea moun ce. ted ap plicati on in order to z Low● Lcoowllepocwtoerr sloastsu, rhaigtihoenffvicoieltnacgy.e z Exe●●cHHlliieggnhh tscuucrrugrerernectancpat-aptboaib-ligitlyiat.yi,nlocwhfaorrawcatredrvisotltiacgse drop. z Pb-●FGreuearpdraincgkfaogr oeviesrvaovltaagileapbrloetection. RoH● SUltprarohdiguhc-tspfoeredpaswckiticnhgincgo. de suffix ”G”● Silicon epitaxial planar chip, metal silicon junction. Hal●ogLeeandf-rfreeee pparortdsumceteftoernpvairconkminegnctaol dsteansduaffridxs“oHf ” MIL-STD-19500 /228
● RoHS product for packing code suffix "G" MAXIMUHMaloRgeAnTfrIeNe GprSodu(Tctaf=or2p5a℃ckinugncloedsessuoffitxh"eHr"wise noted) SymbolMechanPiacraaml edtearta Value VCBO VCEO
● ECpooxllyec: tUoLr-9B4a-sVe0 Vraotletadgfelame retardant -30
● Case : Molded plastic, SOD-123H
● TeCromlliencatlosr:-PElmatiettderteVrom...