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2SC4793 Datasheet Preview

2SC4793 Datasheet

NPN SILICON TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
2SC4793
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR
FEATURES
*High transition frequency
*Power amplifier applications
*Driver stage amplifier applications
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
Package
2SC4793L-x-TF3-T
2SC4793G-x-TF3-T
TO-220F
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment
123
BCE
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 4
QW-R219-009.C




UTC

2SC4793 Datasheet Preview

2SC4793 Datasheet

NPN SILICON TRANSISTOR

No Preview Available !

2SC4793
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
230
V
Collector-Emitter Voltage
VCEO
230
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC 1 A
Base Current
IB 0.1 A
Collector Power Dissipation
TA=25°C
TC=25°C
PC
2.0 W
20 W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless others specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Base -Emitter Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
CLASSIFICATION OF hFE
RANK
RANGE
SYMBOL
BVCEO
VBE
VCE(SAT)
ICBO
IEBO
hFE
fT
Cob
TEST CONDITIONS
IC=10mA, IB=0
VCE=5V, IC=500mA
IC=500mA, IB=50mA
VCB =230V, IE=0
VEB=5V, IC=0
VCE=5V, IC=100mA
VCE=10V, IC=100mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
230 V
1.0 V
1.5 V
1.0 µA
1.0 µA
100 320
100 MHz
20 pF
A
100-200
B
180-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R219-009.C


Part Number 2SC4793
Description NPN SILICON TRANSISTOR
Maker UTC
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