2SC5006
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
12
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current
IC 100 mA
Total Power Dissipation
PT 125 mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-60 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector Cut-Off Current
ICBO
VCB=10V, IE=0
1.0 µA
Emitter Cutoff Current
IEBO VEB=1V, IC=0
1.0 µA
DC Current Gain
hFE VCE=3V, IC=7mA (Note 1)
80 160
Transition Frequency
fT VCE=3V, IC=7mA, f=1GHz
4.5 GHz
Feedback Capacitance
Cre VCB=3V, IE=0, f=1.0MHz (Note 2)
Notes: 1. Pulse measurement PW≤350µs, duty cycle ≤ 2%.
0.7 pF
2. The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal
capacitance bridge.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R221-045.B
