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30NM70 Datasheet Preview

30NM70 Datasheet

N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
30NM70
30A, 700V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 30NM70 is a Super Junction MOSFET Structure and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) < 170 m@ VGS=10V, ID=15A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
30NM70L-TF1-T
30NM70G-TF1-T
30NM70L-TF2-T
30NM70G-TF2-T
30NM70L-TF3-T
30NM70G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F2
TO-220F
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
30NM70G-TF1-T
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TF1: TO-220F1, TF2: TO-220F2, TF3: TO-220F
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 5
QW-R205-236.D




UTC

30NM70 Datasheet Preview

30NM70 Datasheet

N-CHANNEL MOSFET

No Preview Available !

30NM70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
700
±30
V
V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
30
120
A
A
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IAR
EAS
5.86
1116
A
mJ
Peak Diode Recovery dv/dt
dv/dt
16.5 V/ns
Power Dissipation
PD 34 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L =65mH, IAS = 5.86A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 30A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
0.96
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°С/W
°С/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=700V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
700
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=15A
2.5
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 1)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=100V, VGS=10V, ID=30A,
IG=10mA (Note 1,2)
VDD=100V, VGS=10V ID=30A,
RG=25, (Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS=30A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS=30A, VGS=0V,
Qrr dIF/dt=100A/µs
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating ambient temperature.
TYP MAX UNIT
50
+100
-100
V
µA
nA
nA
4.5 V
170 m
2400
1900
125
pF
pF
pF
88 nC
20 nC
36 nC
38 ns
40 ns
230 ns
100 ns
30
120
1.4
610
12.3
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R205-236.D


Part Number 30NM70
Description N-CHANNEL MOSFET
Maker UTC
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