Datasheet4U Logo Datasheet4U.com

3N180-E3 Datasheet - UTC

1800V N-CHANNEL POWER MOSFET

3N180-E3 Features

* RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A

* Low Reverse Transfer Capacitance

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

* SYMBOL Power MOSFET

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N180L

3N180-E3 Datasheet (287.57 KB)

Preview of 3N180-E3 PDF

Datasheet Details

Part number:

3N180-E3

Manufacturer:

UTC

File Size:

287.57 KB

Description:

1800v n-channel power mosfet.

📁 Related Datasheet

3N187 SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR (Vaishali Semiconductor)

3N187 n-channel dual gate MOSFET (Siliconix)

3N188 Dual P-Channel MOSFET (Intersil)

3N189 Dual P-Channel MOSFET (Intersil)

3N100E MTB3N100E (Motorola)

3N1012 Power-Transistor (Infineon)

3N10L26 Power-Transistor (Infineon)

3N120-E3 1200V N-CHANNEL POWER MOSFET (UTC)

3N124 N-channel Transistor (ETC)

3N125 N-channel Transistor (ETC)

TAGS

3N180-E3 1800V N-CHANNEL POWER MOSFET UTC

Image Gallery

3N180-E3 Datasheet Preview Page 2 3N180-E3 Datasheet Preview Page 3

3N180-E3 Distributor