Datasheet Details
| Part number | 3N180-E3 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 287.57 KB |
| Description | 1800V N-CHANNEL POWER MOSFET |
| Datasheet | 3N180-E3-UTC.pdf |
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Overview: UNISONIC TECHNOLOGIES CO., LTD 3N180-E3 Preliminary 3.0A, 1800V N-CHANNEL POWER MOSFET.
| Part number | 3N180-E3 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 287.57 KB |
| Description | 1800V N-CHANNEL POWER MOSFET |
| Datasheet | 3N180-E3-UTC.pdf |
|
|
|
The UTC 3N180-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES0 * RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N180L-TA3-T 3N180G-TA3-T 3N180L-TF1-T 3N180G-TF1-T 3N180L-TQ2-T 3N180G-TQ2-T 3N180L-TQ2-R 3N180G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-D283.a 3N180-E3 MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-D283.a 3N180-E3 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1800 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 3 A 6 A Avalanche Energy Single Pulsed (Note 3) EAS 133 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.1 V/ns Power Dissipation TO-220/TO-263 TO-220F1 PD 70 W 16 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
| Part Number | Description |
|---|---|
| 3N120-E3 | 1200V N-CHANNEL POWER MOSFET |
| 3N150-E3 | N-CHANNEL POWER MOSFET |