Part number:
3N180-E3
Manufacturer:
UTC
File Size:
287.57 KB
Description:
1800v n-channel power mosfet.
* RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
* SYMBOL Power MOSFET
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N180L
3N180-E3 Datasheet (287.57 KB)
3N180-E3
UTC
287.57 KB
1800v n-channel power mosfet.
📁 Related Datasheet
3N187 SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR (Vaishali Semiconductor)
3N187 n-channel dual gate MOSFET (Siliconix)
3N188 Dual P-Channel MOSFET (Intersil)
3N189 Dual P-Channel MOSFET (Intersil)
3N100E MTB3N100E (Motorola)
3N1012 Power-Transistor (Infineon)
3N10L26 Power-Transistor (Infineon)
3N120-E3 1200V N-CHANNEL POWER MOSFET (UTC)
3N124 N-channel Transistor (ETC)
3N125 N-channel Transistor (ETC)