3N180-E3 Datasheet | Unisonic Technologies

UNISONIC TECHNOLOGIES CO., LTD Preliminary 3.0A, 1800V N-CHANNEL POWER MOSFET - DESCRIPTION The UTC 3N180-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. - Features - RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A - Low Reverse Transfer Capacitance - Fast Switching Capability - Avalanche Energy Specified - Improved dv/dt Capability, High Ruggedness - SYMBOL Power MOSFET - ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N180L-TA3-T 3N180G-TA3-T 3N180L-TF1-T 3N180G-TF1-T 3N180L-TQ2-T 3N180G-TQ2-T 3N180L-TQ2-R 3N180G-TQ2-R Note: Pin Assignment: G: Gate D:...