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3N60-TC2 - N-CHANNEL MOSFET

General Description

The UTC 3N60-TC2 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 3.0 Ω @ VGS = 10 V, ID = 1.5A.
  • High Switching Speed.
  • SYMBOL 2.Drain 1 TO-251 1 TO-251S2 1 TO-252 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 3N60-TC2 Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60-TC2 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 3.0 Ω @ VGS = 10 V, ID = 1.5A * High Switching Speed  SYMBOL 2.Drain 1 TO-251 1 TO-251S2 1 TO-252 1.Gate 3.