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3N60-TC2 Datasheet Preview

3N60-TC2 Datasheet

N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
3N60-TC2
Power MOSFET
3A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N60-TC2 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient AC to DC converters and
bridge circuits.
FEATURES
* RDS(ON) 3.0 Ω @ VGS = 10 V, ID = 1.5A
* High Switching Speed
SYMBOL
2.Drain
1
TO-251
1
TO-251S2
1
TO-252
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N60L-TM3-T
3N60G-TM3-T
3N60L-TMS2-T
3N60G-TMS2-T
3N60L-TN3-R
3N60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251
TO-251S2
TO-252
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
3N60G-TM3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube, R: Tape Reel
(2) TM3: TO-251, TMS2: TO-251S2, TN3: TO-252
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC
3N60
1
L: Lead Free
G: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 5
QW-R205-582.A




UTC

3N60-TC2 Datasheet Preview

3N60-TC2 Datasheet

N-CHANNEL MOSFET

No Preview Available !

3N60-TC2
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
ID
IDM
EAS
dv/dt
650 V
± 30 V
3A
6A
80 mJ
4 V/ns
Power Dissipation
PD 45 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 4.0A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD 3.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
Junction to Ambient
θJA 110
Junction to Case
θJC 2.77 (Note)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID= 250μA
Drain-Source Leakage Current
IDSS VDS=650V, VGS=0V
Gate-Source Leakage Current
ON CHARACTERISTICS
Forward
Reverse
IGSS
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS VGS=0V, VDS=25V, f=1.0 MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gateource Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=480V, VGS=10V, ID=3A
IG=1mA (Note 1, 2)
Turn-on Delay Time (Note 1)
tD(ON)
Rise Time
Turn-off Delay Time
tR
tD(OFF)
VDS=100V, VGS=10V, ID=3.0A,
RG=25Ω (Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD VGS=0V, IS=3.0A
Reverse Recovery Time (Note 1)
trr VGS=0V, IS=3.0A,
Reverse Recovery Charge
Qrr dIF/dt=100A/µs (Note1)
Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
650 V
10 µA
100 nA
-100 nA
2.0 4.0 V
3.0 Ω
410 pF
51 pF
2.8 pF
10 nC
4.5 nC
3.3 nC
8 ns
18 ns
20 ns
19 ns
3A
6A
1.4 V
250 ns
1.6 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R205-582.A


Part Number 3N60-TC2
Description N-CHANNEL MOSFET
Maker UTC
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