4N150-P Datasheet, UTC

* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=2.0A * High Switching Speed
* SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
* ORDERING INFORMATION Ordering Number Lead Free .

in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
* FEATURES * RDS(ON) .

The UTC 4N150-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually .