Datasheet4U Logo Datasheet4U.com

4N150 - N-CHANNEL POWER MOSFET

Description

The UTC 4N150 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S 1 TO-220F1 1 TO-220F2 1 TO-247 1 TO-263.
  • RDS(ON) ≤ 6.5 Ω @ VGS=10V, ID=2.0A.
  • High Switching Speed.
  • 100% Avalanche Tested 1 1.
  • SYMBOL TO-3P TO-3PB 1 TO-3PN 1 TO-3PF www. unisonic. com. tw Copyright © 2023 Unisonic Technologies Co. , Ltd 1 of 9 QW-R205-574.F 4N150.

📥 Download Datasheet

Datasheet preview – 4N150

📁 Similar Datasheet

  • 4N150 - N-CHANNEL MOSFET (STMicroelectronics)
  • 4N10 - N-Channel MOSFET Transistor (Inchange Semiconductor)
Other Datasheets by UTC

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 4N150 Power MOSFET 4.0A, 1500V N-CHANNEL POWER MOSFET 1 TO-220 1 TO-220F  DESCRIPTION The UTC 4N150 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES 1 TO-220F1 1 TO-220F2 1 TO-247 1 TO-263 * RDS(ON) ≤ 6.5 Ω @ VGS=10V, ID=2.0A * High Switching Speed * 100% Avalanche Tested 1 1  SYMBOL TO-3P TO-3PB 1 TO-3PN 1 TO-3PF www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-574.
Published: |