* RDS(ON) ≤ 0.65 Ω @ VGS=10V, ID=1.5A * High switching Speed * 100% avalanche tested * Improved dv/dt capability
* SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source <.

* FEATURES * RDS(ON) ≤ 0.65 Ω @ VGS=10V, ID=1.5A * High switching Speed * 100% avalanche tested * Improved dv/dt c.

The UTC 9NM70-S is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used .

9NM70-FDS

9NM70

9NM60

9NM60-FDS

9NM60-S

9NM60N

9NM65

9NM65-FD

9NM65-FDS

9NM95-Q

9NM95Z

9N100

9N120-E3