| Title | |
| Description | The UTC F75NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. FEATURES * RDS(ON) ≤ 46 mΩ @ VGS=10V, ID=35A * Fast body diode MOSFET technology * Low switching losses du... |
| Features |
* RDS(ON) ≤ 46 mΩ @ VGS=10V, ID=35A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Single Pulse Avalanche Energy Rated * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Avalanche energy tested
SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd... |
| Datasheet |
 F75NM60Z Datasheet - 719.94KB |
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