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F80NM60Z - N-CHANNEL MOSFET

General Description

The UTC F80NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications.

such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

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Key Features

  • S.
  • RDS(ON) ≤ 35 mΩ @ VGS=10V, ID=40A.
  • Fast body diode MOSFET technology.
  • Low switching losses due to reduced Qrr.
  • Single Pulse Avalanche Energy Rated.
  • Fast Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Avalanche energy tested.
  • SYMBOL Power MOSFET.

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UNISONIC TECHNOLOGIES CO., LTD F80NM60Z 80A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC F80NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications. such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.