n-channel mosfet.
* RDS(ON) ≤ 35 mΩ @ VGS=10V, ID=40A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Single Pulse Avalanche Energy Rated * Fast Switching S.
such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
* .
The UTC F80NM60Z is an N-channel enhancement mode silicon-gate power MOSFET with fast body diode and ESD Type, designed for high-voltage, high-speed power switching applications. such as fast switching time, low gate charge, low on-state resistance a.
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