MJE13003 - NPN SILICON POWER TRANSISTOR

UTC

Datasheet Details

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical..

S.
Reverse biased SOA with inductive load @ TC=100°C.
Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C.
700V blocking capability.

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