TIP112 transistor equivalent, npn epitaxial silicon darlington transistor.
* High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * Industrial Use
EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)
B
C
E
TO-220
.
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