Datasheet Summary
UTC TIP112
NPN EPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Features
- High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min)
- Low Collector-Emitter Saturation Voltage
- Industrial Use
EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)
TO-220...
