UF630 - N-CHANNEL POWER MOSFETS

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UTC

UF630 N-CHANNEL POWER MOSFETS by UTC - Datasheet Preview — Datasheet preview – UF630

Datasheet Details

Part number	UF630
Manufacturer	UTC
File Size	431.27 KB
Description	N-CHANNEL POWER MOSFETS
Datasheet	UF630 Datasheet
Additional preview pages of the UF630 datasheet.

Product details

Description

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Features

S.
RDS(ON) < 0.4Ω@ VGS = 10V, ID = 5.0A.
Ultra Low Gate Charge ( typical 19 nC ).
Low Reverse Transfer Capacitance ( CRSS = typical 80 pF ).
Fast Switching Capability.
Avalanche Energy Specified.
Improved dv/dt Capability.
SYMBOL 11 TO-220 TO-220F 11 TO-220F1 TO-220F2 1 TO-262 1 TO-263 1 TO-251 1 TO-252 SOP-8.

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Published: Feb 27, 2007 |