n-channel power mosfets.
* RDS(ON) < 0.4Ω@ VGS = 10V, ID = 5.0A * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 80 pF ) * Fast Switching Capability *.
such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
* FEATURES
* RDS(ON) < 0.
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
* FEATURES
* RDS(ON) < 0.4Ω.
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