UF634-Q Description
These kinds of N-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF634-Q suitable for resonant and PWM converter topologies.
UF634-Q Key Features
- RDS(ON) ≤ 0.55 Ω @ VGS=10V, ID=4.0A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
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