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UF634-Q - N-CHANNEL POWER MOSFET

General Description

These kinds of N-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.

The UF634-Q suitable for resonant and PWM converter topologies.

Key Features

  • S.
  • RDS(ON) ≤ 0.55 Ω @ VGS=10V, ID=4.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain 1 1 TO-220 TO-220F 1 TO-252 1 TO-252D 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UF634-Q 8.1A, 250V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION These kinds of N-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF634-Q suitable for resonant and PWM converter topologies.  FEATURES * RDS(ON) ≤ 0.55 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain 1 1 TO-220 TO-220F 1 TO-252 1 TO-252D 1.Gate 3.