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UF630-HC - 200V N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC UF630-HC is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge.

Features

  • RDS(ON) ≤ 0.35 Ω @ VGS=10V, ID=4.5A.
  • High Switching Speed.
  • SYMBOL Power MOSFET.

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Datasheet preview – UF630-HC

Datasheet Details

Part number UF630-HC
Manufacturer UTC
File Size 727.22 KB
Description 200V N-CHANNEL POWER MOSFET
Datasheet download datasheet UF630-HC Datasheet
Additional preview pages of the UF630-HC datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UF630-HC 9.3A, 200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF630-HC is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UF630-HC is universally applied in low voltage such as automotive, high efficiency switching for AC/DC converters and DC motor control, etc.  FEATURES * RDS(ON) ≤ 0.35 Ω @ VGS=10V, ID=4.
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