* RDS(ON)<0.45Ω @ VGS=10V, ID=8.1A * Lower Input Capacitance * Improved Gate Charge * Lower Leakage Current: 10μA (MAX.) @ VDS = 250V * Avalanche Rugged Technology * Rugg.

The UTC UF634 is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS(ON), improved gate charge and so on.
* FEATURES * RDS(ON)<0.45Ω @ VGS=10V, ID=8.1A * Lower Input Capacitance * Improved Gate Charge .

UF630

UF630-HC

UF634-HC

UF634-Q

UF60-005

UF60-01

UF60-02

UF60-04

UF60-06

UF60-08

UF60-10

UF600

UF600A