| Description | The UTC UT150N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES TO-220 * RDS(ON) ≤ 4.2 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A PDFN5×6 * RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A * Excellent gate charge * Very low on-resistance RDS(ON) ... |
| Features |
TO-220 * RDS(ON) ≤ 4.2 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A
PDFN5×6 * RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A
* Excellent gate charge * Very low on-resistance RDS(ON)
SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-466.a UT150N03 ... |
| Datasheet |
 UT150N03 Datasheet 257.21KB |
