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UT150N06M - 60V N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC UT150N06M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Features

  • RDS(ON) ≤ 3.5 mΩ @ VGS=10V, ID=75A RDS(ON) ≤ 5.0 mΩ @ VGS=4.5V, ID=50A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2024 Unisonic Technologies Co. , Ltd 1 of 6 QW-R209-474.a UT150N06M Preliminary Power MOSFET.

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Datasheet Details

Part number UT150N06M
Manufacturer UTC
File Size 254.63 KB
Description 60V N-CHANNEL POWER MOSFET
Datasheet download datasheet UT150N06M Datasheet
Additional preview pages of the UT150N06M datasheet.

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UNISONIC TECHNOLOGIES CO., LTD UT150N06M Preliminary 150A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET  DESCRIPTION The UTC UT150N06M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC UT150N06M is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 3.5 mΩ @ VGS=10V, ID=75A RDS(ON) ≤ 5.0 mΩ @ VGS=4.5V, ID=50A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-474.
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