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UT150N03 - 30V N-CHANNEL POWER MOSFET

General Description

The UTC UT150N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • S TO-220.
  • RDS(ON) ≤ 4.2 mΩ @ VGS=10 V, ID=50A.
  • RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A PDFN5×6.
  • RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A.
  • RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A.
  • Excellent gate charge.
  • Very low on-resistance RDS(ON).
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2024 Unisonic Technologies Co. , Ltd 1 of 7 QW-R209-466.a UT150N03 Preliminary Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT150N03 Preliminary 150A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT150N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.  FEATURES TO-220 * RDS(ON) ≤ 4.2 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A PDFN5×6 * RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A * Excellent gate charge * Very low on-resistance RDS(ON)  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-466.