UT50N04
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
40 V
±20 V
Drain Current
Continuous (VGS=10V)
Pulsed (Note 2)
ID
IDM
50 A
200 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
142 mJ
7 V/ns
Power Dissipation
TO-220/TO-263
TO-252
PD
166 W
50 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.1mH, IAS=53.2A, VDD=25V, RG=25Ω, Starting TJ=25°С
4. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-263
TO-252
Junction to Case
TO-220/TO-263
TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
110
0.75
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-671.D
