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UTD413 - P-CHANNEL MOSFET

General Description

The UTD413 can provide excellent RDS(ON) and low gate charge by using UTC’s advanced trench technology.

The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252 package.

Standard Product UTD413 is Pb-free.

Key Features

  • RDS(ON) ≤ 45 mΩ @ VGS=-10V, ID= -12A.
  • RDS(ON) ≤ 69 mΩ @ VGS=-4.5V, ID= -8.0A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for UTD413 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UTD413. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UTD413 P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTD413 can provide excellent RDS(ON) and low gate charge by using UTC’s advanced trench...

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e excellent RDS(ON) and low gate charge by using UTC’s advanced trench technology. The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252 package. Standard Product UTD413 is Pb-free.  FEATURES * RDS(ON) ≤ 45 mΩ @ VGS=-10V, ID= -12A * RDS(ON) ≤ 69 mΩ @ VGS=-4.5V, ID= -8.

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