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UTD484 - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON) < 15mΩ @ VGS =10 V, ID =20 A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Datasheet preview – UTD484

Datasheet Details

Part number UTD484
Manufacturer UTC
File Size 333.49 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet UTD484 Datasheet
Additional preview pages of the UTD484 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UTD484 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 15mΩ @ VGS =10 V, ID =20 A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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