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UTD413 - P-CHANNEL MOSFET

Datasheet Summary

Description

The UTD413 can provide excellent RDS(ON) and low gate charge by using UTC’s advanced trench technology.

The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252 package.

Standard Product UTD413 is Pb-free.

Features

  • RDS(ON) ≤ 45 mΩ @ VGS=-10V, ID= -12A.
  • RDS(ON) ≤ 69 mΩ @ VGS=-4.5V, ID= -8.0A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Datasheet preview – UTD413

Datasheet Details

Part number UTD413
Manufacturer UTC
File Size 677.58 KB
Description P-CHANNEL MOSFET
Datasheet download datasheet UTD413 Datasheet
Additional preview pages of the UTD413 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UTD413 P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTD413 can provide excellent RDS(ON) and low gate charge by using UTC’s advanced trench technology. The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252 package. Standard Product UTD413 is Pb-free.  FEATURES * RDS(ON) ≤ 45 mΩ @ VGS=-10V, ID= -12A * RDS(ON) ≤ 69 mΩ @ VGS=-4.5V, ID= -8.
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