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UTD452 - N-CHANNEL ENHANCEMENT MODE Power MOSFET

Datasheet Summary

Description

The UTD452 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON)< 8.5mΩ @VGS=10V.
  • RDS(ON)< 14mΩ @VGS=4.5V.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain Lead-free: UTD452L Halogen-free: UTD452G 1.Gate 3.Source.

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Datasheet Details

Part number UTD452
Manufacturer UTC
File Size 212.85 KB
Description N-CHANNEL ENHANCEMENT MODE Power MOSFET
Datasheet download datasheet UTD452 Datasheet
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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UTD452 N-CHANNEL ENHANCEMENT MODE Power MOSFET „ DESCRIPTION The UTD452 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON)< 8.5mΩ @VGS=10V * RDS(ON)< 14mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain Lead-free: UTD452L Halogen-free: UTD452G 1.Gate 3.
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