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UTD452 - N-CHANNEL ENHANCEMENT MODE Power MOSFET

General Description

The UTD452 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON)< 8.5mΩ @VGS=10V.
  • RDS(ON)< 14mΩ @VGS=4.5V.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain Lead-free: UTD452L Halogen-free: UTD452G 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UTD452 N-CHANNEL ENHANCEMENT MODE Power MOSFET „ DESCRIPTION The UTD452 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON)< 8.5mΩ @VGS=10V * RDS(ON)< 14mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain Lead-free: UTD452L Halogen-free: UTD452G 1.Gate 3.