UTD452 mosfet equivalent, n-channel enhancement mode power mosfet.
* RDS(ON)< 8.5mΩ @VGS=10V * RDS(ON)< 14mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
* SYMBOL
2.Drain
Lea.
* FEATURES
* RDS(ON)< 8.5mΩ @VGS=10V * RDS(ON)< 14mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching.
Image gallery
Download