UTD484 mosfet equivalent, n-channel mosfet.
* RDS(ON) < 15mΩ @ VGS =10 V, ID =20 A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
* SYMBOL
2.Drain
Power MOSFET
1..
* FEATURES
* RDS(ON) < 15mΩ @ VGS =10 V, ID =20 A * Low capacitance * Low gate charge * Fast switching capability *.
The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES
* RDS(ON) < 15mΩ @ VGS =10 V, ID =2.
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