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TPV70R170M Datasheet Preview

TPV70R170M Datasheet

700V Super-Junction Power MOSFET

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TPA70R170M, TPB70R170M, TPC70R170M, TPP70R170M, TPV70R170M, TPW70R170M
Wuxi Unigroup Microelectronics Company
700V Super-Junction Power MOSFET
FEATURES
Very low FOM RDS(on)×Qg
100% avalanche tested
RoHS compliant
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device
TPA70R170M TPB70R170M TPC70R170M
Package
TO-220F
TO-263
TO-262
Marking
70R170M
70R170M
70R170M
TPP70R170M
TO-220
70R170M
TPV70R170M
TO-3PN
70R170M
TPW70R170M
TO-247
70R170M
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Drain-Source Voltage (VGS = 0V)
Symbol
VDSS
Value
TO-220,TO-263,TO-262,
TO-3PN,TO-247
700
Continuous Drain Current
TC = 25ºC
TC = 100ºC
ID
20
12
Pulsed Drain Current
(note1)
IDM
60
Gate-Source Voltage
VGSS
±30
Single Pulse Avalanche Energy
(note2)
EAS
484
Avalanche Current
(note1)
IAR
3.5
Repetitive Avalanche Energy
(note1)
EAR
0.7
MOSFET dv/dt ruggedness, VDS = 0...480V
dv/dt
50
Reverse diode dv/dt, VDS = 0…480V, ISD ID
dv/dt
15
Power Dissipation (TC = 25ºC)
PD 151
Operating Junction and Storage Temperature Range
TJ, Tstg
-55~+150
TO-220F
Unit
V
A
A
V
mJ
A
mJ
V/ns
V/ns
34 W
ºC
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RthJC
RthJA
TO-220
Value
TO-3PN TO-247
0.83
62
TO-220F
3.7
80
Unit
ºC/W
V1.0
1 www.tsinghuaicwx.com




Unigroup

TPV70R170M Datasheet Preview

TPV70R170M Datasheet

700V Super-Junction Power MOSFET

No Preview Available !

TPA70R170M, TPB70R170M, TPC70R170M, TPP70R170M, TPV70R170M, TPW70R170M
Wuxi Unigroup Microelectronics Company
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Gate resistance
Dynamic
IGSS
VGS(th)
RDS(on)
RG
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
IS
ISM
VSD
trr
Qrr
Irrm
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V, TJ = 25ºC
VDS = 700V, VGS = 0V, TJ = 150ºC
VGS = ±30V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 10A
f = 1.0MHz open drain
VGS = 0V,
VDS = 100V,
f = 1.0MHz
VDD = 520V, ID = 20A,
VGS = 10V
VDD = 400V, ID = 20A,
RG = 25
TC = 25ºC
TJ = 25ºC, ISD = 20A, VGS = 0V
VR = 400V, IF = IS,
diF/dt = 100A/μs
Value
Min. Typ.
Max.
700 -- --
-- -- 1
-- -- 100
-- -- ±100
2.5 -- 4.5
-- 0.15 0.17
-- 12 --
-- 1724 --
-- 61 --
-- 6 --
-- 38.5 --
-- 8 --
-- 15 --
-- 15 --
-- 59 --
-- 121 --
-- 44 --
-- -- 20
-- -- 60
-- 0.9 1.2
-- 423 --
-- 5.3 --
-- 25 --
Unit
V
μA
nA
V
Ω
pF
nC
ns
A
V
ns
μC
A
Notes
1. Repetitive Rating: Pulse Width limited by maximum junction temperature
2. IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%
V1.0
2 www.tsinghuaicwx.com


Part Number TPV70R170M
Description 700V Super-Junction Power MOSFET
Maker Unigroup
Total Page 12 Pages
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