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Unigroup

TTP80N04AT Datasheet Preview

TTP80N04AT Datasheet

N-Channel Trench MOSFET

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TTD80N04AT, TTP80N04AT
Wuxi Unigroup Microelectronics Company
40V N-Channel Trench MOSFET
FEATURES
Trench Power MOSFET Technology
Low RDS(ON)
Low Gate Charge
Optimized For Fast-switching Applications
APPLICATIONS
Synchronous Rectification in DC/DC and AC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial
Device Marking and Package Information
Device
Package
TTD80N04AT
TO-252
TTP80N04AT
TO-220
Marking
80N04AT
80N04AT
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
TO-252
TO-220
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation (TC = 25ºC)
Operating Junction and Storage Temperature Range
(note1)
(note2)
VDSS
ID
IDM
VGSS
EAS
IAs
PD
TJ, Tstg
40
80
320
±20
78
22
120
-55~+175
Unit
V
A
A
V
mJ
A
W
ºC
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RthJC
RthJA
Value
TO-252
TO-220
1.25
60
Unit
K/W
V1.1
1 www.tsinghuaicwx.com




Unigroup

TTP80N04AT Datasheet Preview

TTP80N04AT Datasheet

N-Channel Trench MOSFET

No Preview Available !

TTD80N04AT, TTP80N04AT
Wuxi Unigroup Microelectronics Company
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
Gate-Source Threshold Voltage
IGSS
VGS(th)
Drain-Source On-Resistance (Note3) RDS(on)
Forward Transconductance (Note3)
Dynamic
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V, TJ = 25ºC
VDS = 40V, VGS = 0V, TJ = 150ºC
VGS = ±20V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 30A
VDS = 10V, ID =20A
VGS = 0V,
VDS = 20V,
f = 1.0MHz
VDD = 20V, ID = 20A,
VGS = 10V
VDD = 20V, ID = 20A,
RG = 3
TC = 25ºC
TJ = 25ºC, ISD = 20A, VGS = 0V
IF = 20A,
diF/dt = 100A/μs
Min.
Value
Typ.
Max.
40 -- --
-- -- 1
-- -- 100
-- -- ±100
1.0 1.7 2.4
4.5 5.9
-- 6.8 8.9
-- 35.9 --
-- 4874 --
-- 281 --
-- 210 --
-- 63 --
-- 11 --
-- 11 --
-- 13 --
-- 23 --
-- 40 --
-- 28 --
-- -- 80
-- -- 240
-- -- 1.2
-- 32 --
-- 35 --
Unit
V
μA
nA
V
mΩ
mΩ
S
pF
nC
ns
A
V
ns
nC
Notes
1. Repetitive Rating: Pulse Width limited by maximum junction temperature
2. VDD = 40V, RG = 25Ω, Starting TJ = 25°C
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%
V1.1
2 www.tsinghuaicwx.com


Part Number TTP80N04AT
Description N-Channel Trench MOSFET
Maker Unigroup
Total Page 8 Pages
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