10N65 mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 0.86Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
* SYMBO.
in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually us.
Image gallery
TAGS
Download (Size : 414.35KB)