10N65 Key Features
- RDS(ON) < 0.86Ω@VGS =10V
- Low gate charge ( typical 44 nC)
- Low Crss ( typical 18 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- SYMBOL
- ORDERING INFORMATION
- MARKING INFORMATION
- Part: 10N65
- Manufacturer: Unisonic Technologies (official site)
- Size: 414.35 KB
Other 10N65 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
| CHONGQING PINGYANG CHONGQING PINGYANG |
10N65 | N-CHANNEL MOSFET |
LGE |
10N65 | N-Channel MOSFET |
JINAN JINGHENG |
10N65 | 650V N Channel Power MOSFET |
| CHONGQING PINGYANG CHONGQING PINGYANG |
10N65B | N-CHANNEL MOSFET |
| CHONGQING PINGYANG CHONGQING PINGYANG |
10N65F | N-CHANNEL MOSFET |
10N65 Description
The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.