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12N65K-MT Datasheet Preview

12N65K-MT Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
12N65K-MT
Preliminary
12A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 12N65K-MT are N-Channel enhancement mode
power field effect transistors (MOSFET) which are produced by
using UTC’s proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode power
supply. To minimize on-state resistance, provide superior switching
performance and withstand high energy pulse in the avalanche and
commutation mode, the advanced technology has been especially
tailored.
FEATURES
* RDS(ON) < 0.75 @ VGS = 10 V, ID = 6 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N65KL-TF1-T
12N65KG-TF1-T
12N65KL-TF2-T
12N65KG-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
12N65KL-TF1-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TF1: TO-220F1, TF2: TO-220F2
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-B07.F




Unisonic Technologies

12N65K-MT Datasheet Preview

12N65K-MT Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

12N65K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage
Drain Current
Avalanche Energy
Continuous
Pulsed (Note 2)
Single Pulsed (Note 3)
VGSS
ID
IDM
EAS
±30 V
12 A
48 A
400 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
PD 51 W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 5.55mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 12A, di/dt 200A/s, VDD BVDSS Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
2.43
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA
Drain-Source Leakage Current
IDSS VDS = 650 V, VGS = 0 V
Gate-Source Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250µA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 30V, ID = 0.5A,
RG = 25(Note 1, 2)
VDS= 50V,ID= 1.3A,
VGS= 10 V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 12A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
650 V
1 µA
±100 nA
0.7 V/°C
2.0 4.0 V
0.60 0.75
1600 1900 pF
175 210 pF
10 22 pF
100 110 ns
125 138 ns
180 230 ns
104 140 ns
39 54 nC
10 nC
9 nC
1.4 V
12 A
48 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-B07.F


Part Number 12N65K-MT
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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