12N65K-MT Datasheet, Unisonic Technologies

* RDS(ON) < 0.75 Ω @ VGS = 10 V, ID = 6 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET.

The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minim.