The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology.
This technology is specialized in allowing a minimum on-state resistance and superior switching performance.
Key Features
RDS(on) ≤ 1.1Ω @ VGS=10V, ID=6.0A.
High switching speed.
100% avalanche tested.
SYMBOL
2.Drain
1
TO-3P
1 TO-220F1
TO-220F TO-220F2
1.Gate
3.Source.
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12N90. For precise diagrams, tables, and layout, please refer to the original PDF.
UNISONIC TECHNOLOGIES CO., LTD 12N90 12A, 900V N-CHANNEL POWER MOSFET Power MOSFET DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s ...
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UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N90 is universally applied in high efficiency switch mode power supply. 1 1 FEATURES * RDS(on) ≤ 1.1Ω @ VGS=10V, ID=6.0A * High switching speed * 100% avalanche tested SYMBOL 2.Drain 1 TO-3P 1 TO-220F1 TO-220F TO-220F2 1.Gate 3.
12N90 Datasheet
