12N90 Key Features
- RDS(on) ≤ 1.1Ω @ VGS=10V, ID=6.0A
- High switching speed
- 100% avalanche tested
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: 12N90
- Manufacturer: Unisonic Technologies (official site)
- Size: 413.87 KB
Other 12N90 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
12N90 | N-Channel Mosfet Transistor |
Unisonic Technologies |
12N90-C | N-CHANNEL MOSFET |
12N90 Description
The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and mutation mode.