18N40 Datasheet | Unisonic Technologies

DESCRIPTION Power MOSFET The UTC 18N40 is a 400V N-channel Power MOSFET, providing customers with perfect RDS(ON), low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in PWM applications. - FEATURES - RDS(ON) ≤ 408mΩ @VGS = 10 V - Ultra Low Gate Charge: 50n C (TYP.) - Low Reverse Transfer ( CRSS = typical 23p F ) - Fast Switching Speed - Avalanche Energy Specified - Improved dv/dt Capability, High Ruggedness - SYMBOL 2.Drain 1.Gate 3.Source - ORDERING INFORMATION Ordering Number Lead Free Halogen-Free 18N40L-T47-T 18N40G-T47-T Package TO-247 1 G Pin Assignment 2 3 D S Packing Tube .. .unisonic..tw 1 of 3 QW-R502-389.A Copyright © 2010 Unisonic Technologies Co., Ltd - ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Power MOSFET SYMBOL RATINGS UNIT VDSS 400 V VGSS ±30 V Continuous ID 18 A Drain Current Pulsed IDM 45 A Avalanche Current IAR 18 A Single Pulsed EAS 1000 m J Avalanche Energy 30 m J Repetitive EAR Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation PD 360 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. - THERMAL DATA PARAMETER SYMBOL θJC RATINGS 0.35 UNIT °С/W Junction to Case - ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) MIN 400 25 ±100 2.0 4.0 200 2500 280 23 50 15 18 21 22 62 22 1.5 18 54 200 0.8 TYP MAX UNIT V µA n A V mΩ p F p F p F n C n C n C ns ns ns ns V A A ns µC PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Drain-Source Leakage Current IDSS VDS=400V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source...