1N60Z - N-CHANNEL POWER MOSFET

Unisonic Technologies

General Description

The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Key Features

S.
RDS(ON).

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1N60Z n-channel power mosfet by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	1N60Z
Manufacturer	Unisonic Technologies
File Size	295.87 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	1N60Z Datasheet

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Full PDF Text Transcription for 1N60Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 1N60Z. For precise diagrams, tables, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 1N60Z 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics...

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s a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) <11.5Ω@ VGS=10V, ID=0.6A * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain Power MOSFET 1.