Download 1N60Z Datasheet PDF
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1N60Z page 2
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1N60Z page 3
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1N60Z Key Features

  • RDS(ON) <11.5Ω@ VGS=10V, ID=0.6A
  • Ultra Low gate charge (typical 5.0nC)
  • Low reverse transfer capacitance (CRSS = typical 3.0 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • SYMBOL
  • ORDERING INFORMATION
  • 1N60ZG-AA3-R
  • MARKING

Other 1N60Z Datasheets

Manufacturer Part Number Description
CITC Logo Chip Integration Technology 1N60 Small Signal Diodes
Sunmate Logo Sunmate 1N60 SMALL SIGNAL SCHOTTKY DIODES
MCC Logo Micro Commercial Components 1N60 Schottky Barrier Rectifier
KD Logo KD 1N60 SMALL SIGNAL SCHOTTKY DIODE
TAITRON Logo Taitron Components 1N60 Germanium Glass Diode

1N60Z Description

The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.