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1N65 Key Features

  • RDS(ON) <12.5Ω @ VGS=10V, ID=0.6A
  • Ultra Low gate charge (typical 5.0nC)
  • Low reverse transfer capacitance (CRSS = typical 3.0 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • SYMBOL
  • ORDERING INFORMATION
  • S S SGDDDD
  • MARKING

Other 1N65 Datasheets

Manufacturer Part Number Description
BKC Logo BKC 1N65 Gold Bonded Diode
Microsemi Logo Microsemi 1N6510 Isolated Diode Array
SENSITRON SEMICONDUCTOR Logo SENSITRON SEMICONDUCTOR 1N6510 Isolated Diode Array
Microsemi Logo Microsemi 1N6511 Isolated Diode Array
SSDI Logo SSDI 1N6512 ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

View all 1N65 datasheets →

1N65 Description

The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.