1N65 Datasheet | Specifications & PDF Download

MDF11N65B N-channel MOSFET 650V MDF11N65B N-Channel MOSFET 650V, 12A, 0.65Ω General Description These N-channel MOSFET are produced using advanced M

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1

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STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 a

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N-Channel Trench Power MOSFET General Description The CSD01N650 combines advanced trench MOSFET technology with a low resistance package to provide ex

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LSD11N65 LonFET Lonten N-channel 650V, 11A, 0.35Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction

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CET01N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 0.3A, RDS(ON) = 15Ω @VGS = 10V. High dense cell design for

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS

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CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP01N65 CEB01N65 CEF01N65 VDSS 650V 650

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DTU11N65SJ/DTP11N6SJ/DTP11N6FSJ www.din-tek.jp N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS(on) m

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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High Voltage Diodes - Axial Lead 25mA - 250mA • 70ns • Hermetic • JANTX • JANTXV Part Working Number Reverse Voltage (Vrwm) ELECTRICAL CHARACTERISTI

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Empower The World InPower Product Lines Confidential Free Datasheet http://www.datasheet4u.com/ Discrete Power Products Empower The World IPS Bas

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MSJPF11N65A Features • Very Low FOM RDS(on)×Q g • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finis

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1N6513 2.0A 2.0kV 70nS Ultra-Fast Recovery High Voltage Silicon Rectifying Diode ------------------------------------------------------------------

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·E

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●General Description The SJ MOSFET HMS11N65 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device of

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WML11N65C2, WMK11N65C2, WMM11N65C2 WMN11N65C2, WMP11N65C2, WMO11N65C2 650V 0.47Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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