1N65 Datasheet | Specifications & PDF Download

STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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DTU11N65SJ/DTP11N6SJ/DTP11N6FSJ www.din-tek.jp N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS(on) m

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CET01N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 0.3A, RDS(ON) = 15Ω @VGS = 10V. High dense cell design for

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MDF11N65B N-channel MOSFET 650V MDF11N65B N-Channel MOSFET 650V, 12A, 0.65Ω General Description These N-channel MOSFET are produced using advanced M

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●General Description The SJ MOSFET HMS11N65 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device of

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High Voltage Diodes - Axial Lead 25mA - 250mA • 70ns • Hermetic • JANTX • JANTXV Part Working Number Reverse Voltage (Vrwm) ELECTRICAL CHARACTERISTI

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www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for

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STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 a

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.

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CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP01N65 CEB01N65 CEF01N65 VDSS 650V 650

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Empower The World InPower Product Lines Confidential Free Datasheet http://www.datasheet4u.com/ Discrete Power Products Empower The World IPS Bas

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N-Channel Trench Power MOSFET General Description The CSD01N650 combines advanced trench MOSFET technology with a low resistance package to provide ex

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Silan Microelectronics SVSP11N65FJHD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65FJHD2 is an N-channel enhancemen

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.

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1N6513, 1N6515, 1N6517, 1N6519 High-reliability discrete products and engineering services since 1977 0.5A – 2.0A RECTIFIERS FEATURES  Available a

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HMS1N65S N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provid

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2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED 1N6513U 1N6515U 1N6517U JANTX Part

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2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED 1N6513U 1N6515U 1N6517U JANTX Part

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