DG1N65S is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
| Part number | DG1N65S |
|---|---|
| Manufacturer | DGME |
| File Size | 645.39 KB |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Datasheet |
 DG1N65S Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| DG1N15A | Schottky Barrier Diode | SHINDENGEN |
| DG1 | MINIATURE CLAMPER / DAMPER GLASS PASSIVATED JUNCTION RECTIFIER | General |
| DG1 | Standard Sinterglass Diode | Vishay Siliconix |
| DG1 | CLAMPER/DAMPER RECTIFIER | Frontier Electronics |
| DG1104B | SMT LED | Stanley Electric |
| Part Number | Description |
|---|---|
| DG1N65 | N-CHANNEL ENHANCEMENT MODE MOSFET |
| DG1N60 | N-CHANNEL ENHANCEMENT MODE MOSFET |
| DG1N60S | N-CHANNEL ENHANCEMENT MODE MOSFET |
| DG10N60 | N-CHANNEL ENHANCEMENT MODE MOSFET |
| DG10N65 | N-CHANNEL ENHANCEMENT MODE MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
