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DG1N65S - N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

DG1N65S is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG1N65S
Manufacturer DGME
File Size 645.39 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG1N65S Datasheet
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DG1N65S N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG1N65SN，， ，，，。 ，，。 DG1N65S is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 0.5 12 3.
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