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DG1N65 - N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet Summary

Description

DG1N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG1N65
Manufacturer DGME
File Size 1.25 MB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG1N65 Datasheet
Additional preview pages of the DG1N65 datasheet.

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DG1N65 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG1N65N，， ，，，。 ，，。 DG1N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 1.3 9.5 5.
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