DG1N65 datasheet by DGME.
| Part number | DG1N65 |
|---|---|
| Datasheet | DG1N65-DGME.pdf |
| File Size | 1.25 MB |
| Manufacturer | DGME |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
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DG1N65是N沟道增强型场效应晶体管，应用了东光微电的相关专利技术，采用自对准平面 工艺及先进的终端耐压技术，降低了导通损耗，提高了开关特性，增强了雪崩耐量。该产 品能应用于多种功率开关电路，使得电源能效更高，系统更加小型化。 DG1N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in...
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|---|---|
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