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DG1N60 - N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet Summary

Description

DG1N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG1N60
Manufacturer DGME
File Size 1.32 MB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG1N60 Datasheet
Additional preview pages of the DG1N60 datasheet.

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DG1N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG1N60N，， ，，，。 ，，。 DG1N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAINCHARACTERISTICS VDSS ID RDS(ON) Crss 600 1.3 9.0 5.
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