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SVF11N65T - 650V N-CHANNEL MOSFET

General Description

The SVF11N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Key Features

  • 11A, 650V, RDS(on)(typ. )= 0.76Ω@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVF11N65T
Manufacturer Silan Microelectronics
File Size 284.33 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF11N65T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVF11N65T/F_Datasheet 11A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION The SVF11N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES  11A, 650V, RDS(on)(typ.)= 0.76Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.