SVF11N65T Description
The SVF11N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are...
SVF11N65T Key Features
- 11A, 650V, RDS(on)(typ.)= 0.76Ω@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability