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SVF11N90PN - MOSFET

General Description

SVF11N90PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Key Features

  • ∗ 11A, 900V, RDS(on) (typ. )=0.82Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet Details

Part number SVF11N90PN
Manufacturer Silan Microelectronics
File Size 260.91 KB
Description MOSFET
Datasheet download datasheet SVF11N90PN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVF11N90PN_Datasheet 11A, 900V N-CHANNEL MOSFET DESCRIPTION SVF11N90PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 11A, 900V, RDS(on) (typ.)=0.82Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.