SVF11N90PN Datasheet | Silan Microelectronics

SVF11N90PN_Datasheet 11A, 900V N-CHANNEL MOSFET DESCRIPTION SVF11N90PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. Features ∗ 11A, 900V, RDS(on) (typ.)=0.82Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF11N90PN Package TO-3PN Marking 11N90 Material Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://.silan..cn REV:1.0 2012.12.18 Page 1 of 7 Silan Microelectronics SVF11N90PN_Datasheet...