SVF11N65F Datasheet | Silan Microelectronics

SVF11N65T/F_Datasheet 11A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION The SVF11N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Features - 11A, 650V, RDS(on)(typ.)= 0.76Ω@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF11N65T SVF11N65F Package TO-220-3L TO-220F-3L Marking SVF11N65T SVF11N65F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.1 Page 1 of 8 Silan Microelectronics...