SVS11N65F Datasheet | Silan Microelectronics

Silan Microelectronics SVS11N65T/F/K_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65T/F/K is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 3 TO-262-3L 1.Gate 2.Drain 3.Source Features - 11A,650V, RDS(on)(typ.)=0.37Ω@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche...