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SVS11N65F Datasheet Transistor

Manufacturer: Silan Microelectronics

Overview: Silan Microelectronics SVS11N65T/F/K_Datasheet 11A, 650V DP MOS POWER.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

SVS11N65T/F/K is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Key Features

  • 11A,650V, RDS(on)(typ. )=0.37Ω@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 1 23 TO-220F-3L 1 23 TO-220-3L.

More Datasheets from Silan Microelectronics

Part Number Description
SVS11N65FJHD2 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVS11N65K TRANSISTOR
SVS11N65T TRANSISTOR
SVS11N60FD2 600V DP MOS POWER TRANSISTOR
SVS11N60FJD2 600V DP MOS POWER TRANSISTOR
SVS11N60KD2 600V DP MOS POWER TRANSISTOR
SVS11N60SD2 600V DP MOS POWER TRANSISTOR
SVS11N60TD2 600V DP MOS POWER TRANSISTOR
SVS12N80F 800V DP MOS POWER TRANSISTOR
SVS12N80FJ 800V DP MOS POWER TRANSISTOR

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