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SVS11N65K - TRANSISTOR

Download the SVS11N65K datasheet PDF. This datasheet also covers the SVS11N65T variant, as both devices belong to the same transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVS11N65T/F/K is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 11A,650V, RDS(on)(typ. )=0.37Ω@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 1 23 TO-220F-3L 1 23 TO-220-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVS11N65T-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS11N65K
Manufacturer Silan Microelectronics
File Size 239.80 KB
Description TRANSISTOR
Datasheet download datasheet SVS11N65K Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVS11N65T/F/K_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65T/F/K is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 11 23 3 TO-262-3L 1.Gate 2.Drain 3.Source FEATURES  11A,650V, RDS(on)(typ.)=0.