SVS11N65FJHD2 Datasheet | Silan Microelectronics

Silan Microelectronics SVS11N65FJHD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example. it is suitable for hard and soft switching topologies. 1 3 1.Gate 2.Drain 3.Source Features - 11A,650V, RDS(on)(typ.)=0.33@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic...