SVS11N65FJHD2 Description
SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
SVS11N65FJHD2 Key Features
- 11A,650V, RDS(on)(typ.)=0.33@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability