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SVS11N65T - TRANSISTOR

General Description

SVS11N65T/F/K is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 11A,650V, RDS(on)(typ. )=0.37Ω@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 1 23 TO-220F-3L 1 23 TO-220-3L.

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Datasheet Details

Part number SVS11N65T
Manufacturer Silan Microelectronics
File Size 239.80 KB
Description TRANSISTOR
Datasheet download datasheet SVS11N65T Datasheet

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Full PDF Text Transcription (Reference)

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Silan Microelectronics SVS11N65T/F/K_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65T/F/K is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 11 23 3 TO-262-3L 1.Gate 2.Drain 3.Source FEATURES  11A,650V, RDS(on)(typ.)=0.