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2N50K-TA - N-CHANNEL POWER MOSFET

General Description

The UTC 2N50K-TA is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology.

This technology allows a minimum on-state resistance and superior switching performance.

Key Features

  • RDS(ON) < 4.9Ω @ VGS=10V, ID=1A.
  • High Switching Speed.
  • 100% Avalanche Tested.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source www. unisonic. com. tw Copyright © 2014 Unisonic Technologies Co. , Ltd 1 of 7 QW-R205-031.A 2N50K-TA Preliminary Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2N50K-TA Preliminary 2A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N50K-TA is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N50K-TA is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.  FEATURES * RDS(ON) < 4.9Ω @ VGS=10V, ID=1A * High Switching Speed * 100% Avalanche Tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co.