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2N65L Key Features

  • RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A
  • Ultra Low gate charge (typical 9.0nC)
  • Low reverse transfer capacitance (CRSS = typical 5.0 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING

Other 2N65L Datasheets

Manufacturer Part Number Description
JINAN JINGHENG Logo JINAN JINGHENG 2N65 650V N-Channel Power MOSFET
GME Logo Galaxy Microelectronics 2N65 N-CHANNEL POWER MOSFET
Inchange Semiconductor Logo Inchange Semiconductor 2N65 N-Channel MOSFET Transistor
UTC Logo Unisonic Technologies 2N65 650V N-CHANNEL POWER MOSFET
UTC Logo Unisonic Technologies 2N65-CB N-CHANNEL MOSFET

2N65L Description

The UTC 2N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.